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odm cf4 process for gas measurement

odm cf4 process for gas measurement

CF4 Gas Detector Sensors. 0. NEO Monitors LaserGas Q CF4 is using Tuneable Laser AbsorptionSpectroscopy (TLAS) i.e a non-contact optical measurement method employing solid-state laser sources. The sensor remains unaffected by contaminants corrosives and does not require regular maintenance. The absence of extractive conditioning systems further improves availability of the measurements and eliminates errors related to sample handling.

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  • Protocol for Measurement of Tetrafluoromethane (CF4) and

    The specific objective of the measurement process, as described herein, is to make measurements of CF. 4. and C. 2. F. 6. and collect pertinent smelter process data that allow the calculation of facility specific emission factors as described in the Intergovernmental Panel on Climate Change (IPCC) Tier 3 method.

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  • Comparison of CF4 and C4F8 gas etching profiles by multiscale

    the active species for different process gases, CF 4 and C 4F 8, has not yet been reported. Moreover, there have been no reports on a quantitative comparison of the etching profiles by simulation that focuses on the amount of deposition for the two gases. We reported a method of simulating plasma using CF 4 gas as the process gas in the gas

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  • Material Safety Data Sheet Tetrafluoromethane CF4

    Appearance: Colorless gas Physical State: Gas Molecular Weight: 88.0 Chemical Formula: CF4 Odor: Odorless Specific Gravity (Air =1): 3.038 10. Stability and reactivity Normal Stable (Conditions to Avoid): Stable under normal conditions. Incompatibilities: May react violently with chemically active metals such Alkali and alkaline

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  • Tetraflouromethane, CF4 Specialty Gas | Concorde Specialty Gases

    CF4, Tetrafluoromethane, R-14 Specialty Gas. Carbon Tetrafluoromethane (CF4, R-14) is a low temperature refrigerant and is also used in a variety of wafer etch processes. Tetrafluoromethane is used with oxygen to etch polysilicon, silicon dioxide, and silicon nitride. It is relatively inert under normal conditions and is a oxygen displacer.

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  • Carbon tetrafluoride - Wikipedia

    Tetrafluoromethane is a potent greenhouse gas that contributes to the greenhouse effect. It is very stable, has an atmospheric lifetime of 50,000 years, and a high greenhouse warming potential 6,500 times that of CO 2. Tetrafluoromethane is the most abundant perfluorocarbon in the atmosphere, where it is designated as PFC-14.

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  • Plasma Etching - diyhpl

    Theory: The CHF3 and CF4 provide the F radicals that do the etching of the silicon dioxide, SiO2. The high voltage RF power creates a plasma and the gasses in the chamber are broken into radicals and ions. The F radical combines with Si to make SiF4 which is volatile and is removed by pumping.

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  • In-Situ Plasma Chamber Monitoring for Feedforward Process Control

    polymer thickness measurement. Using gas flows of 45sccm CHF3 and 15sccm CF4 at 50mTorr and 1000W. the oxide:polysilicon selectivity ranges from 2.6 to 8.5 as the polymer thickness on the tool walls varies from 0 to 240rim. The

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  • CF4 plasma surface modification of asymmetric hydrophilic

    Jul 15, 2012 · Then argon gas was injected at a rate of 100 standard cubic centimeters (SCCM) with a glow discharge at 45 W for 30 s. The system was evacuated to 100 mTorr. Then CF 4 was injected at a speed of 18 SCCM till the pressure of 200 mTorr.

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  • Post etch photoresist and residue removal process - AXCELIS

    An oxygen plasma ashing process for a downstream plasma ashing device which includes flowing a plasma gas composition of an oxygen gas, a hydrogen bearing gas and a CF4 and/or C2F6 and/or NF3 gas into a reaction chamber (20) and generating a plasma therein to remove photoresist and post etch residues from a substrate (15), characterised by flowing CHF3 gas into the reaction chamber (20) in an amount effective to remove substantially all of the photoresist and post etch residues from the

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  • China Semiconductor Gas, Semiconductor Gas Manufacturers

    China Semiconductor Gas manufacturers - Select 2021 high quality Semiconductor Gas products in best price from certified Chinese Refrigerant Gas manufacturers, Rubber Gas Pipe suppliers, wholesalers and factory on Made-in-China.com

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  • Reduction of CF4 Emissions from the Aluminum Smelter in Essen

    An estimation of the off-gas emission continuously containing 7 % CF4 and 0.7 % C2F6 leads to an emission of about 20 million t CO2-eq. per year during the production of 30,000 t/a neodymium

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  • Gas Odorization System - GOE SO 1 - Honeywell Process

    In order to immediately detect natural gas leaking, it is necessary to add an odorous substance (odorant) to the odourless natural gas. Special devices adding the odorant in the required concentration are used for this process, which is called odorization. The GOE -SO-1 odorization system operates accor-ding to the injection method.

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  • Electron attachment, effective ionization coefficient, and

    Dec 01, 1992 · Effective ionization coefficient á for CFQ and Ar/CF4. 0 150 100 VII. GAS/AGING/SIMULATIONS 278 W S. Anderson et al. / Electron attachment of CF4 gas mixtures set at 5 Torr to make it easier to cover a large range of E/P. The positive high voltage in the avalanche region was fixed for each of the gas mixtures.

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  • Shandong Ruihua Fluoride Industry Co., Ltd

    Shandong Ruihua Fluoride Industry is a high-tech enterprise specializing in the research, production and sales of fluorine products. Working with several renowned universities and state-run laboratories, we have developed carbon tetrafluoride (CF 4), sulfur tetrafluoride (SF 4), high purity fluorine and other series of products.

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  • A scintillating gas detector for 2D dose measurements in

    Sep 07, 2008 · During this process, photons are emitted by the excited Ar/CF4 gas molecules and detected by a mirror-lens-CCD camera system. Since the amount of emitted light is proportional to the dose deposited in the sensitive volume of the detector by the incoming beam, the intensity distribution of the measured light spot is proportional to the 2D hadron dose distribution.

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  • High Performance Mass Flow Controller - Horiba

    improve process gas flow rate control precision. High accuracy y=ax5+bx4+cx3+dx2+ex+f 60% 1 2 3 4 5 80% 100% Sensor output (V) Flow rate High accuracy ±1.0% S.P. MFClinearity is compensated by polynomial approximated curve. This achieves high accuracy for all flow control ranges. For the purpose of advancement of actual gas accuracy, the calibration

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  • 30 CFR § 250.1203 - Gas measurement. | CFR | US Law | LII

    You must: (1) Submit a written application to, and obtain approval from, the Regional Supervisor before commencing gas production, or making any changes to the previously-approved measurement and/or allocation procedures.

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  • NEO Monitors LaserGas - NEO Monitors Q - CF4 Gas Detector

    CF4 Gas Detector Sensors. 0. NEO Monitors LaserGas Q CF4 is using Tuneable Laser AbsorptionSpectroscopy (TLAS) i.e a non-contact optical measurement method employing solid-state laser sources. The sensor remains unaffected by contaminants corrosives and does not require regular maintenance. The absence of extractive conditioning systems further improves availability of the measurements and eliminates errors related to sample handling.

    Get Price
  • FACTORS AFFECTING PFC EMISSIONS FROM COMMERCIAL ALUMINUM

    Jerry Marks 2 of 8 Introduction Two gaseous perfluorocarbon (PFC) compounds, tetrafluoromethane (CF4) and hexafluoroethane (C2F6), are emitted as byproducts of primary aluminum production.

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  • NEO Monitors LaserGas - NEO Monitors Q - CF4 Gas Detector

    CF4 Gas Detector Sensors. 0. NEO Monitors LaserGas Q CF4 is using Tuneable Laser AbsorptionSpectroscopy (TLAS) i.e a non-contact optical measurement method employing solid-state laser sources. The sensor remains unaffected by contaminants corrosives and does not require regular maintenance. The absence of extractive conditioning systems further improves availability of the measurements and eliminates errors related to sample handling.

    Get Price
  • China Silane Gas, Sih4 Gas 99.99-99.9999% - China Sih4, Silane

    Sih4, Silane, Pressure Y Cylinder manufacturer / supplier in China, offering Silane Gas, Sih4 Gas 99.99-99.9999%, 20m3 Cryogenic Liquid Oxygen Nitrogen Argon CO2 Storage Tank Container, High Performance Medical Oxygen Machine 10L Oxygen Concentrator and so on.

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  • Plasma Etch Tool Gap Distance DOE Final Report

    The new process gap set point is 1.2 cm, and is much more stable than the current process (see figure 2). To maintain the etch rate of the current process, so that throughput is not sacrificed, the pressure set point must be increased in the new process to 385 mT. In order to implement the new process, we must examine possible effects of the main

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  • Measurement of work function in CF₄ gas - ResearchGate

    CF4 gas is useful in many applications, especially as a drift gas in particle detection chambers. In order to make accurate measurements of incident particles the properties of the drift gas must

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  • Plasma Treatment of Contact Lens - Glow Research

    Jun 03, 2013 · Process Gas: Room Air Manufactured test discs were used instead of lenses, so that a more accurate wetting angle measurement could be conducted. The polished faces are used to assimilate the polished front and base curve of a lens.

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  • OPTIX Robust Easy to Use Residual Gas Analysis for the

    • Quantitative gas analysis down to 2 ppm (Pressure gauge added for QGA) • Gas mixture balance – up to 8 gases – can be selected • Process gas tracking with trigger / alarm outputs • Full spectrum view 200-850nm, control of integration time for sensitivity adjustments • Tuneable spectrum view – more focussed range

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  • CF 4 laser oscillator-amplifier measurements: small signal

    Some of the fundamental parameters associated with the CF4 optically pumped laser were measured with the aid of an oscillator-amplifier arrangement. The small-signal gain for the strongest P-branch line was determined for pure CF4 and for CF4 in the presence of He and CO buffer gases at different pressures. The self-absorption of the laser radiation by CF4 was determined for various P-, Q

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  • In-Situ UV Absorption CF2 Sensor for Reactive Ion Etch

    The gas mixture we use for the experiment is CF4/C11F3. The range ofvaring flow rate ratio is from CF4 : CHF3 = 1: 3 up to CF4 : CHF3 3 : 1. Total gas flow is fixed, which validates the assumption that for a given operating gas pressure the residence time of the gas species in the chamber is constant. There is 5 volume % argon included

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  • Wire Chamber Gases* - CiteSeerX

    data. However, there are still some disagreements, for example in the case of CF4 gas (see fig. 6). Difficulties of the simulation codes with CF4 gas may be linked to a considerable disagreement among existing measurements, especially at high E/p (see-fig. 7).

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  • Monitoring System_zetian

    Hot wet method: measurement is proceeding under high temperature (120-140℃) heat tracing for whole process and effectively prevent water from liquefying that affect measurement and pollution of gas cell. Condensation: use pre-cooling and condenser to separate gas and water rapidly; directly measure dry base value of gaseous pollutants. Features

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