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bosean sf6 o2 process exporters

bosean sf6 o2 process exporters

Jan 08, 2020 · The CORE process resembles the well-known SF 6-based Bosch process, but the usual C 4 F 8 inhibitor is replaced by O 2 oxidation with self-limiting characteristics. Therefore the CORE result is similar to Bosch, however has the advantage of preventing the pile-up of fluorocarbon deposits at the topside of deep-etched or nano-sized features.

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  • High-speed anisotropic etching of quartz using SF 6 /C 4 F 8

    For an etch process optimized for high etch rate and minimum surface roughness using C4F8/SF6/O2/Ar gases, an etch rate of 0.55 μm/min and a rms surface roughness of ~25 nm was obtained for SF6 flow rate of 5 sccm, C4F8 flow rate of 5 sccm, O2 flow rate of 50 sccm, Ar flow rate of 50 sccm.

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    The waste is being treated by ion exchange process using resorcinol formaldehyde (RF) resin for removal of Cs and Sr. cr of SF6-CF4, SF6-CO2, SF6-O2, SF6-CH4, SF6-C2H6 and SF6-CHF3 under 300 K

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  • Mechanisms in reactive ion etching of silicon carbide thin

    The etching mechanisms for the reactive ion etching of SiC thin films were investigated using fluorinated gases, such as SF6/O2, CHF3/O2, CBrF3/O2. The major mechanisms involved are: (1) physical removal by sputtering due to ionized particles within the plasma, and (2) chemical reaction of active plasma species with C and Si with the generation of volatile products.

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  • Influence of Oxygen Flow Rate on the Variation of Surface

    Pre-polished fused silica substrates with average surface roughness of 1.5 nm (rms) were used for the investigation of the plasma polishing process. SF6 was used as the active etching gas, Ar and O2 or their mixture was used as carrying gas. The gas flow of SF6 was fixed at 10 SCCM, the total flow rate of the carrying gases was selected as 110

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  • The CORE Sequence: A Nanoscale Fluorocarbon-Free Silicon

    Jan 08, 2020 · The CORE process resembles the well-known SF 6-based Bosch process, but the usual C 4 F 8 inhibitor is replaced by O 2 oxidation with self-limiting characteristics. Therefore the CORE result is similar to Bosch, however has the advantage of preventing the pile-up of fluorocarbon deposits at the topside of deep-etched or nano-sized features.

    Get Price
  • Electronegative Plasma Instabilities in Pulsed Plasmas - NASA/ADS

    Various gas mixtures are programmable (Ar, SF6, O2). ICP coils in different configurations are driven by pulsed RF generators operating separately from 400 kHz to 40 MHz. A stainless steel ``chuck'' assembly can be positioned at a variable height, either with a wafer and RF bias, or with direct DC bias to directly program sheath voltage.

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  • Study of SiO2 Etching Processing with CH4/SF6 Plasmas - Man

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  • MENU - Massachusetts Institute of Technology

    Process Lab Tool Process Category Subcategory Characteristics Description C2F6,SF6,Cl2,He,O2,BCl3,CH4: Dual chamber PECVD and plasma etch tool Red + ICL: P10:

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  • General Etching Info - CNF User Wiki - Dashboard

    Export to PDF Export to Word Ambient: SF6/O2. Etch rate (A/min): 1100. Selectivity: 300:1 oxide. Fast Oxide Reactive Ion Etching Process Database. PLEASE NOTE

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